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Comprehensive characterization of vertical GaN-on-GaN Schot..:
Raja, P. Vigneshwara
;
Raynaud, Christophe
;
Sonneville, Camille
...
Microelectronics Journal. 128 (2022) - p. 105575 , 2022
Link:
https://doi.org/10.1016/j.mejo.2022.105575
RT Journal T1
Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mejo.2022.105575&Exemplar=1&LAN=DE A1 Raja, P. Vigneshwara A1 Raynaud, Christophe A1 Sonneville, Camille A1 Eric N'Dohi, Atse Julien A1 Morel, Hervé A1 Phung, Luong Viet A1 Ngo, Thi Huong A1 De Mierry, Philippe A1 Frayssinet, Eric A1 Maher, Hassan A1 Tasselli, Josiane A1 Isoird, Karine A1 Morancho, Frédéric A1 Cordier, Yvon A1 Planson, Dominique PB Elsevier BV YR 2022 SN 0026-2692 JF Microelectronics Journal VO 128 SP 105575 LK http://dx.doi.org/https://doi.org/10.1016/j.mejo.2022.105575 DO https://doi.org/10.1016/j.mejo.2022.105575 SF ELIB - SuUB Bremen
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