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A new analytical modelling of 10 nm negative capacitance-do..:
Mukherjee, Adrija
;
Debnath, Papiya
;
Nirmal, D.
.
Microelectronics Journal. 133 (2023) - p. 105689 , 2023
Link:
https://doi.org/10.1016/j.mejo.2023.105689
RT Journal T1
A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mejo.2023.105689&Exemplar=1&LAN=DE A1 Mukherjee, Adrija A1 Debnath, Papiya A1 Nirmal, D. A1 Chanda, Manash PB Elsevier BV YR 2023 SN 0026-2692 JF Microelectronics Journal VO 133 SP 105689 LK http://dx.doi.org/https://doi.org/10.1016/j.mejo.2023.105689 DO https://doi.org/10.1016/j.mejo.2023.105689 SF ELIB - SuUB Bremen
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