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Physics based model development of a double gate reverse T-..:
Manikanta, K.
;
Nanda, Umakanta
;
Pandey, Chandan Kumar
Microelectronics Journal. 144 (2024) - p. 106100 , 2024
Link:
https://doi.org/10.1016/j.mejo.2024.106100
RT Journal T1
Physics based model development of a double gate reverse T-shaped channel TFET including 1D and 2D band-to-band tunneling components
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mejo.2024.106100&Exemplar=1&LAN=DE A1 Manikanta, K. A1 Nanda, Umakanta A1 Pandey, Chandan Kumar PB Elsevier BV YR 2024 SN 0026-2692 JF Microelectronics Journal VO 144 SP 106100 LK http://dx.doi.org/https://doi.org/10.1016/j.mejo.2024.106100 DO https://doi.org/10.1016/j.mejo.2024.106100 SF ELIB - SuUB Bremen
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