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1 Ergebnisse
1
Suppressed current collapse and improved threshold voltage ..:
Zhu, Yitai
;
Zhang, Yu
;
Qu, Haolan
...
Microelectronics Journal. 148 (2024) - p. 106191 , 2024
Link:
https://doi.org/10.1016/j.mejo.2024.106191
RT Journal T1
Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mejo.2024.106191&Exemplar=1&LAN=DE A1 Zhu, Yitai A1 Zhang, Yu A1 Qu, Haolan A1 Gao, Han A1 Du, Haitao A1 Guo, Haowen A1 Zou, Xinbo PB Elsevier BV YR 2024 SN 0026-2692 JF Microelectronics Journal VO 148 SP 106191 LK http://dx.doi.org/https://doi.org/10.1016/j.mejo.2024.106191 DO https://doi.org/10.1016/j.mejo.2024.106191 SF ELIB - SuUB Bremen
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