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Physical degradation of GaN HEMT devices under high drain b..:
Park, S.Y.
;
Floresca, Carlo
;
Chowdhury, Uttiya
...
Microelectronics Reliability. 49 (2009) 5 - p. 478-483 , 2009
Link:
https://doi.org/10.1016/j.microrel.2009.02.015
RT Journal T1
Physical degradation of GaN HEMT devices under high drain bias reliability testing
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.microrel.2009.02.015&Exemplar=1&LAN=DE A1 Park, S.Y. A1 Floresca, Carlo A1 Chowdhury, Uttiya A1 Jimenez, Jose L. A1 Lee, Cathy A1 Beam, Edward A1 Saunier, Paul A1 Balistreri, Tony A1 Kim, Moon J. PB Elsevier BV YR 2009 SN 0026-2714 JF Microelectronics Reliability VO 49 IS 5 SP 478 OP 483 LK http://dx.doi.org/https://doi.org/10.1016/j.microrel.2009.02.015 DO https://doi.org/10.1016/j.microrel.2009.02.015 SF ELIB - SuUB Bremen
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