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1 Ergebnisse
1
Effect of gate barrier and channel buffer layer on electric..:
Lin, Cheng-I
;
Fang, Yean-Kuen
;
Chang, Wei-Chao
..
Microelectronics Reliability. 54 (2014) 5 - p. 905-910 , 2014
Link:
https://doi.org/10.1016/j.microrel.2014.01.015
RT Journal T1 <Title>Effect of gate barrier and channel buffer layer on electric properties and transparence of the a-IGZO thin film transistor</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.microrel.2014.01.015&Exemplar=1&LAN=DE A1 Lin, Cheng-I A1 Fang, Yean-Kuen A1 Chang, Wei-Chao A1 Chiou, Mao-Wei A1 Chen, Chih-Wei PB Elsevier BV YR 2014 SN 0026-2714 JF Microelectronics Reliability VO 54 IS 5 SP 905 OP 910 LK http://dx.doi.org/https://doi.org/10.1016/j.microrel.2014.01.015 DO https://doi.org/10.1016/j.microrel.2014.01.015 SF ELIB - SuUB Bremen
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