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1 Ergebnisse
1
Read static noise margin aging model considering SBD and BT..:
Mehrabi, Kolsoom
;
Ebrahimi, Behzad
;
Yarmand, Roohollah
..
Microelectronics Reliability. 65 (2016) - p. 20-26 , 2016
Link:
https://doi.org/10.1016/j.microrel.2016.07.003
RT Journal T1
Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.microrel.2016.07.003&Exemplar=1&LAN=DE A1 Mehrabi, Kolsoom A1 Ebrahimi, Behzad A1 Yarmand, Roohollah A1 Afzali-Kusha, Ali A1 Mahmoodi, Hamid PB Elsevier BV YR 2016 SN 0026-2714 JF Microelectronics Reliability VO 65 SP 20 OP 26 LK http://dx.doi.org/https://doi.org/10.1016/j.microrel.2016.07.003 DO https://doi.org/10.1016/j.microrel.2016.07.003 SF ELIB - SuUB Bremen
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