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Stable and reliable ohmic contact on p-type 4H-SiC up to 15..:
Abou Hamad, Valdemar
;
Abi Tannous, Tony
;
Soueidan, Maher
...
Microelectronics Reliability. 110 (2020) - p. 113694 , 2020
Link:
https://doi.org/10.1016/j.microrel.2020.113694
RT Journal T1
Stable and reliable ohmic contact on p-type 4H-SiC up to 1500 h of aging at 600 °C
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.microrel.2020.113694&Exemplar=1&LAN=DE A1 Abou Hamad, Valdemar A1 Abi Tannous, Tony A1 Soueidan, Maher A1 Gremillard, Laurent A1 Fabregue, Damien A1 Penuelas, Jose A1 Zaatar, Youssef PB Elsevier BV YR 2020 SN 0026-2714 JF Microelectronics Reliability VO 110 SP 113694 LK http://dx.doi.org/https://doi.org/10.1016/j.microrel.2020.113694 DO https://doi.org/10.1016/j.microrel.2020.113694 SF ELIB - SuUB Bremen
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