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Separation of electron and hole trapping components of PBTI..:
Waltl, Michael
;
Stampfer, Bernhard
;
Rzepa, Gerhard
..
Microelectronics Reliability. 114 (2020) - p. 113746 , 2020
Link:
https://doi.org/10.1016/j.microrel.2020.113746
RT Journal T1 <Title>Separation of electron and hole trapping components of PBTI in SiON nMOS transistors</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.microrel.2020.113746&Exemplar=1&LAN=DE A1 Waltl, Michael A1 Stampfer, Bernhard A1 Rzepa, Gerhard A1 Kaczer, Ben A1 Grasser, Tibor PB Elsevier BV YR 2020 SN 0026-2714 JF Microelectronics Reliability VO 114 SP 113746 LK http://dx.doi.org/https://doi.org/10.1016/j.microrel.2020.113746 DO https://doi.org/10.1016/j.microrel.2020.113746 SF ELIB - SuUB Bremen
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