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Accelerated aging for gate oxide of SiC MOSFETs under conti..:
Hayashi, Shin-Ichiro
;
Wada, Keiji
Microelectronics Reliability. 126 (2021) - p. 114213 , 2021
Link:
https://doi.org/10.1016/j.microrel.2021.114213
RT Journal T1
Accelerated aging for gate oxide of SiC MOSFETs under continuous switching conditions by applying advanced HTGB test
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.microrel.2021.114213&Exemplar=1&LAN=DE A1 Hayashi, Shin-Ichiro A1 Wada, Keiji PB Elsevier BV YR 2021 SN 0026-2714 JF Microelectronics Reliability VO 126 SP 114213 LK http://dx.doi.org/https://doi.org/10.1016/j.microrel.2021.114213 DO https://doi.org/10.1016/j.microrel.2021.114213 SF ELIB - SuUB Bremen
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