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Concurrent characterization of GaN MOSHEMT gate leakage via..:
Kortge, David
;
Maize, Kerry
;
Lyu, Xiao
...
Microelectronics Reliability. 148 (2023) - p. 115122 , 2023
Link:
https://doi.org/10.1016/j.microrel.2023.115122
RT Journal T1
Concurrent characterization of GaN MOSHEMT gate leakage via electrical and thermoreflectance measurements
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.microrel.2023.115122&Exemplar=1&LAN=DE A1 Kortge, David A1 Maize, Kerry A1 Lyu, Xiao A1 Bermel, Peter A1 Ye, Peide A1 Shakouri, Ali PB Elsevier BV YR 2023 SN 0026-2714 JF Microelectronics Reliability VO 148 SP 115122 LK http://dx.doi.org/https://doi.org/10.1016/j.microrel.2023.115122 DO https://doi.org/10.1016/j.microrel.2023.115122 SF ELIB - SuUB Bremen
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