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Scaling of dislocation cells in GaAs crystals by global num..:
Rudolph, P.
;
Frank-Rotsch, Ch.
;
Juda, U.
.
Materials Science and Engineering: A. 400-401 (2005) - p. 170-174 , 2005
Link:
https://doi.org/10.1016/j.msea.2004.12.054
RT Journal T1 <Title>Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.msea.2004.12.054&Exemplar=1&LAN=DE A1 Rudolph, P. A1 Frank-Rotsch, Ch. A1 Juda, U. A1 Kiessling, F.-M. PB Elsevier BV YR 2005 SN 0921-5093 JF Materials Science and Engineering: A VO 400-401 SP 170 OP 174 LK http://dx.doi.org/https://doi.org/10.1016/j.msea.2004.12.054 DO https://doi.org/10.1016/j.msea.2004.12.054 SF ELIB - SuUB Bremen
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