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Qualitative doping area characterization of SONOS transisto..:
Heo, Jinhee
;
Kim, Deoksu
;
Kim, Chung woo
.
Materials Science and Engineering: B. 124-125 (2005) - p. 301-304 , 2005
Link:
https://doi.org/10.1016/j.mseb.2005.08.097
RT Journal T1 <Title>Qualitative doping area characterization of SONOS transistor utilizing scanning capacitance microscopy (SCM) and scanning spread resistance microscopy (SSRM)</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mseb.2005.08.097&Exemplar=1&LAN=DE A1 Heo, Jinhee A1 Kim, Deoksu A1 Kim, Chung woo A1 Chung, Ilsub PB Elsevier BV YR 2005 SN 0921-5107 JF Materials Science and Engineering: B VO 124-125 SP 301 OP 304 LK http://dx.doi.org/https://doi.org/10.1016/j.mseb.2005.08.097 DO https://doi.org/10.1016/j.mseb.2005.08.097 SF ELIB - SuUB Bremen
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