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1 Ergebnisse
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Electrical properties of RF-sputtered Zn-doped GaN films an..:
Tuan, Thi Tran Anh
;
Kuo, Dong-Hau
;
Saragih, Albert Daniel
.
Materials Science and Engineering: B. 222 (2017) - p. 18-25 , 2017
Link:
https://doi.org/10.1016/j.mseb.2017.04.008
RT Journal T1
Electrical properties of RF-sputtered Zn-doped GaN films and p -Zn-GaN/ n -Si hetero junction diode with low leakage current of 10 −9 A and a high rectification ratio above 10 5
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mseb.2017.04.008&Exemplar=1&LAN=DE A1 Tuan, Thi Tran Anh A1 Kuo, Dong-Hau A1 Saragih, Albert Daniel A1 Li, Guan-Zhang PB Elsevier BV YR 2017 SN 0921-5107 JF Materials Science and Engineering: B VO 222 SP 18 OP 25 LK http://dx.doi.org/https://doi.org/10.1016/j.mseb.2017.04.008 DO https://doi.org/10.1016/j.mseb.2017.04.008 SF ELIB - SuUB Bremen
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