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Contact-free defect investigation of wafer-annealed Fe-dope..:
Hahn, S.
;
Dornich, K.
;
Hahn, T.
..
Materials Science in Semiconductor Processing. 9 (2006) 1-3 - p. 355-358 , 2006
Link:
https://doi.org/10.1016/j.mssp.2006.01.077
RT Journal T1 <Title>Contact-free defect investigation of wafer-annealed Fe-doped SI-InP</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2006.01.077&Exemplar=1&LAN=DE A1 Hahn, S. A1 Dornich, K. A1 Hahn, T. A1 Köhler, A. A1 Niklas, J.R. PB Elsevier BV YR 2006 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 9 IS 1-3 SP 355 OP 358 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2006.01.077 DO https://doi.org/10.1016/j.mssp.2006.01.077 SF ELIB - SuUB Bremen
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