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Defects annealing in 4H–SiC epitaxial layer probed by low t..:

Litrico, G. ; Zimbone, M. ; Musumeci, P..
Materials Science in Semiconductor Processing.  15 (2012)  6 - p. 740-743 , 2012
Link: https://doi.org/10.1016/j.mssp.2012.07.002