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1 Ergebnisse
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Improvements in passivation effect of amorphous InGaZnO thi..:
Dong, Chengyuan
;
Shi, Junfei
;
Wu, Jie
...
Materials Science in Semiconductor Processing. 20 (2014) - p. 7-11 , 2014
Link:
https://doi.org/10.1016/j.mssp.2013.12.009
RT Journal T1 <Title>Improvements in passivation effect of amorphous InGaZnO thin film transistors</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2013.12.009&Exemplar=1&LAN=DE A1 Dong, Chengyuan A1 Shi, Junfei A1 Wu, Jie A1 Chen, Yuting A1 Zhou, Daxiang A1 Hu, Zhe A1 Xie, Haiting A1 Zhan, Runze A1 Zou, Zhongfei PB Elsevier BV YR 2014 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 20 SP 7 OP 11 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2013.12.009 DO https://doi.org/10.1016/j.mssp.2013.12.009 SF ELIB - SuUB Bremen
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