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On the quality of hydrogenated amorphous silicon deposited ..:
Shaik, Habibuddin
;
Anand, Venu
;
Rao G, Mohan
Materials Science in Semiconductor Processing. 26 (2014) - p. 367-373 , 2014
Link:
https://doi.org/10.1016/j.mssp.2014.05.021
RT Journal T1 <Title>On the quality of hydrogenated amorphous silicon deposited by sputtering</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2014.05.021&Exemplar=1&LAN=DE A1 Shaik, Habibuddin A1 Anand, Venu A1 Rao G, Mohan PB Elsevier BV YR 2014 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 26 SP 367 OP 373 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2014.05.021 DO https://doi.org/10.1016/j.mssp.2014.05.021 SF ELIB - SuUB Bremen
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