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Distribution of barrier heights in metal/n-InAlAs Schottky ..:
Hamdaoui, N.
;
Ajjel, R.
;
Salem, B.
.
Materials Science in Semiconductor Processing. 26 (2014) - p. 431-437 , 2014
Link:
https://doi.org/10.1016/j.mssp.2014.05.043
RT Journal T1 <Title>Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current–voltage–temperature measurements</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2014.05.043&Exemplar=1&LAN=DE A1 Hamdaoui, N. A1 Ajjel, R. A1 Salem, B. A1 Gendry, M. PB Elsevier BV YR 2014 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 26 SP 431 OP 437 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2014.05.043 DO https://doi.org/10.1016/j.mssp.2014.05.043 SF ELIB - SuUB Bremen
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