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Evaluation of Schottky barrier source/drain contact on gate..:
Ho, Ching-Yuan
;
Chang, Yew-Jen
Materials Science in Semiconductor Processing. 61 (2017) - p. 150-155 , 2017
Link:
https://doi.org/10.1016/j.mssp.2016.11.029
RT Journal T1 <Title>Evaluation of Schottky barrier source/drain contact on gate-all-around polycrystalline silicon nanowire MOSFET</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2016.11.029&Exemplar=1&LAN=DE A1 Ho, Ching-Yuan A1 Chang, Yew-Jen PB Elsevier BV YR 2017 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 61 SP 150 OP 155 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2016.11.029 DO https://doi.org/10.1016/j.mssp.2016.11.029 SF ELIB - SuUB Bremen
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