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1 Ergebnisse
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Electrical and structural characteristics of Ge-doped GaN t..:
Thao, Cao Phuong
;
Kuo, Dong–Hau
Materials Science in Semiconductor Processing. 74 (2018) - p. 336-341 , 2018
Link:
https://doi.org/10.1016/j.mssp.2017.10.024
RT Journal T1 <Title>Electrical and structural characteristics of Ge-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2017.10.024&Exemplar=1&LAN=DE A1 Thao, Cao Phuong A1 Kuo, Dong–Hau PB Elsevier BV YR 2018 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 74 SP 336 OP 341 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2017.10.024 DO https://doi.org/10.1016/j.mssp.2017.10.024 SF ELIB - SuUB Bremen
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