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Mechanism of void formation in TiN/AlSiCu/TiN/plasma-enhanc..:
Naoe, Takuya
;
Endoh, Hirohiko
;
Fuchino, Fumihiro
...
Materials Science in Semiconductor Processing. 83 (2018) - p. 239-248 , 2018
Link:
https://doi.org/10.1016/j.mssp.2018.04.013
RT Journal T1 <Title>Mechanism of void formation in TiN/AlSiCu/TiN/plasma-enhanced tetraethyl orthosilicate SiO2 multi-layer structures via high-temperature stress migration</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2018.04.013&Exemplar=1&LAN=DE A1 Naoe, Takuya A1 Endoh, Hirohiko A1 Fuchino, Fumihiro A1 Miyata, Masanori A1 Miyake, Hidetsugu A1 Takahashi, Takuya A1 Fujimoto, Takaaki PB Elsevier BV YR 2018 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 83 SP 239 OP 248 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2018.04.013 DO https://doi.org/10.1016/j.mssp.2018.04.013 SF ELIB - SuUB Bremen
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