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1 Ergebnisse
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An improved DRBL AlGaN/GaN HEMT with high power added effic..:
Jia, Hujun
;
Zhu, Shunwei
;
Hu, Mei
...
Materials Science in Semiconductor Processing. 89 (2019) - p. 212-215 , 2019
Link:
https://doi.org/10.1016/j.mssp.2018.09.013
RT Journal T1 <Title>An improved DRBL AlGaN/GaN HEMT with high power added efficiency</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2018.09.013&Exemplar=1&LAN=DE A1 Jia, Hujun A1 Zhu, Shunwei A1 Hu, Mei A1 Tong, Yibo A1 Li, Tao A1 Yang, Yintang PB Elsevier BV YR 2019 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 89 SP 212 OP 215 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2018.09.013 DO https://doi.org/10.1016/j.mssp.2018.09.013 SF ELIB - SuUB Bremen
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