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Study of a saturation point to establish the doping density..:
Ain, Qura Tul
;
Bano, N.
;
Al-Modlej, Abeer
...
Materials Science in Semiconductor Processing. 96 (2019) - p. 116-121 , 2019
Link:
https://doi.org/10.1016/j.mssp.2019.02.032
RT Journal T1 <Title>Study of a saturation point to establish the doping density limit of silicon with graphene oxide</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2019.02.032&Exemplar=1&LAN=DE A1 Ain, Qura Tul A1 Bano, N. A1 Al-Modlej, Abeer A1 Alshammari, Abeer A1 Hussain, I. A1 Anjum, Muhammad Naeem PB Elsevier BV YR 2019 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 96 SP 116 OP 121 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2019.02.032 DO https://doi.org/10.1016/j.mssp.2019.02.032 SF ELIB - SuUB Bremen
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