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1 Ergebnisse
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High crystal quality strained Si0.5Ge0.5 layer with a thick..:
Zhao, Zhiqian
;
Li, Yongliang
;
Gu, Shihai
...
Materials Science in Semiconductor Processing. 99 (2019) - p. 159-164 , 2019
Link:
https://doi.org/10.1016/j.mssp.2019.04.033
RT Journal T1 <Title>High crystal quality strained Si0.5Ge0.5 layer with a thickness of up to 50 nm grown on the three-layer SiGe strain relaxed buffer</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2019.04.033&Exemplar=1&LAN=DE A1 Zhao, Zhiqian A1 Li, Yongliang A1 Gu, Shihai A1 Zhang, Qingzhu A1 Wang, Guilei A1 Li, Junjie A1 Li, Yan A1 Xu, Gaobo A1 Ma, Xueli A1 Wang, Xiaolei A1 Yang, Hong A1 Luo, Jun A1 Li, JunFeng A1 Yin, Huaxiang A1 Wang, Wenwu PB Elsevier BV YR 2019 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 99 SP 159 OP 164 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2019.04.033 DO https://doi.org/10.1016/j.mssp.2019.04.033 SF ELIB - SuUB Bremen
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