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Study of the properties of SiOx layers prepared by differen..:
Chandra Mandal, Nabin
;
Biswas, Susmita
;
Acharya, Shiladitya
...
Materials Science in Semiconductor Processing. 119 (2020) - p. 105163 , 2020
Link:
https://doi.org/10.1016/j.mssp.2020.105163
RT Journal T1
Study of the properties of SiOx layers prepared by different techniques for rear side passivation in TOPCon solar cells
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2020.105163&Exemplar=1&LAN=DE A1 Chandra Mandal, Nabin A1 Biswas, Susmita A1 Acharya, Shiladitya A1 Panda, Tamalika A1 Sadhukhan, Sourav A1 Sharma, Jayasree Roy A1 Nandi, Anupam A1 Bose, Sukanta A1 Kole, Arindam A1 Das, Gourab A1 Maity, Santanu A1 Chaudhuri, Partha A1 Saha, Hiranmay PB Elsevier BV YR 2020 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 119 SP 105163 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2020.105163 DO https://doi.org/10.1016/j.mssp.2020.105163 SF ELIB - SuUB Bremen
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