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Optoelectronic properties of coexisting InGaZnO4 structures:
Iordanidou, Konstantina
;
Persson, Clas
Materials Science in Semiconductor Processing. 121 (2021) - p. 105297 , 2021
Link:
https://doi.org/10.1016/j.mssp.2020.105297
RT Journal T1 <Title>Optoelectronic properties of coexisting InGaZnO4 structures</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2020.105297&Exemplar=1&LAN=DE A1 Iordanidou, Konstantina A1 Persson, Clas PB Elsevier BV YR 2021 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 121 SP 105297 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2020.105297 DO https://doi.org/10.1016/j.mssp.2020.105297 SF ELIB - SuUB Bremen
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