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Defects induced resistive switching behavior in Ca doped YM..:
Gadani, Keval
;
Rathod, K.N.
;
Dhruv, Davit
...
Materials Science in Semiconductor Processing. 121 (2021) - p. 105347 , 2021
Link:
https://doi.org/10.1016/j.mssp.2020.105347
RT Journal T1 <Title>Defects induced resistive switching behavior in Ca doped YMnO3–based non–volatile memory devices through electronic excitations</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2020.105347&Exemplar=1&LAN=DE A1 Gadani, Keval A1 Rathod, K.N. A1 Dhruv, Davit A1 Shrimali, V.G. A1 Rajyaguru, Bhargav A1 Joseph, Joyce A1 Joshi, A.D. A1 Pandya, D.D. A1 Asokan, K. A1 Solanki, P.S. A1 Shah, N.A. PB Elsevier BV YR 2021 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 121 SP 105347 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2020.105347 DO https://doi.org/10.1016/j.mssp.2020.105347 SF ELIB - SuUB Bremen
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