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Growth and characterization of cubic GaN grown on GaAs (110..:
Daldoul, I.
;
Othmani, S.
;
Mballo, A.
...
Materials Science in Semiconductor Processing. 132 (2021) - p. 105909 , 2021
Link:
https://doi.org/10.1016/j.mssp.2021.105909
RT Journal T1 <Title>Growth and characterization of cubic GaN grown on GaAs (110) substrate by MOVPE</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2021.105909&Exemplar=1&LAN=DE A1 Daldoul, I. A1 Othmani, S. A1 Mballo, A. A1 Vuong, P. A1 Salvestrini, J.P. A1 Chaaben, N. PB Elsevier BV YR 2021 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 132 SP 105909 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2021.105909 DO https://doi.org/10.1016/j.mssp.2021.105909 SF ELIB - SuUB Bremen
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