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1 Ergebnisse
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Multilayer SiNx passivated Al2O3 gate dielectric featuring ..:
Wang, Cong
;
Wei, Yu-Chen
;
Tan, Xiao
..
Materials Science in Semiconductor Processing. 135 (2021) - p. 106038 , 2021
Link:
https://doi.org/10.1016/j.mssp.2021.106038
RT Journal T1 <Title>Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2021.106038&Exemplar=1&LAN=DE A1 Wang, Cong A1 Wei, Yu-Chen A1 Tan, Xiao A1 Ali, Luqman A1 Jing, Chang-Qiang PB Elsevier BV YR 2021 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 135 SP 106038 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2021.106038 DO https://doi.org/10.1016/j.mssp.2021.106038 SF ELIB - SuUB Bremen
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