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Bias-stress stability of top-gate coplanar a-ITGZO TFTs wit..:
Kong, Heesung
;
Cho, Kyoungah
;
Lee, Hosang
...
Materials Science in Semiconductor Processing. 143 (2022) - p. 106527 , 2022
Link:
https://doi.org/10.1016/j.mssp.2022.106527
RT Journal T1 <Title>Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2022.106527&Exemplar=1&LAN=DE A1 Kong, Heesung A1 Cho, Kyoungah A1 Lee, Hosang A1 Lee, Seungjun A1 Lim, Junhyung A1 Kim, Sangsig PB Elsevier BV YR 2022 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 143 SP 106527 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2022.106527 DO https://doi.org/10.1016/j.mssp.2022.106527 SF ELIB - SuUB Bremen
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