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An experimental study of Ge diffusion through Ge2Sb2Te5:
Luong, Minh Anh
;
Ran, Sijia
;
Bernard, Mathieu
.
Materials Science in Semiconductor Processing. 152 (2022) - p. 107101 , 2022
Link:
https://doi.org/10.1016/j.mssp.2022.107101
RT Journal T1 <Title>An experimental study of Ge diffusion through Ge2Sb2Te5</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2022.107101&Exemplar=1&LAN=DE A1 Luong, Minh Anh A1 Ran, Sijia A1 Bernard, Mathieu A1 Claverie, Alain PB Elsevier BV YR 2022 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 152 SP 107101 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2022.107101 DO https://doi.org/10.1016/j.mssp.2022.107101 SF ELIB - SuUB Bremen
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