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Influence of pulsed laser deposited hafnium oxide thin film..:
Yadav, Gunjan
;
Jindal, Kajal
;
Tomar, Monika
Materials Science in Semiconductor Processing. 153 (2023) - p. 107136 , 2023
Link:
https://doi.org/10.1016/j.mssp.2022.107136
RT Journal T1 <Title>Influence of pulsed laser deposited hafnium oxide thin film as gate dielectric on the fabrication of Al0.1Ga0.9N/GaN MOS-HEMT</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2022.107136&Exemplar=1&LAN=DE A1 Yadav, Gunjan A1 Jindal, Kajal A1 Tomar, Monika PB Elsevier BV YR 2023 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 153 SP 107136 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2022.107136 DO https://doi.org/10.1016/j.mssp.2022.107136 SF ELIB - SuUB Bremen
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