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Corrigendum to "Effects of oxygen vacancies on ferroelectri..:
Han, Changhyeon
;
Kwon, Ki Ryun
;
Kim, Jeonghan
...
Materials Science in Semiconductor Processing. 160 (2023) - p. 107465 , 2023
Link:
https://doi.org/10.1016/j.mssp.2023.107465
RT Journal T1
Corrigendum to "Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2" [Mater. Sci. Semicond. Process. 160 (2023) 107401]
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2023.107465&Exemplar=1&LAN=DE A1 Han, Changhyeon A1 Kwon, Ki Ryun A1 Kim, Jeonghan A1 Yim, Jiyong A1 Kim, Sangwoo A1 Park, Eun Chan A1 You, Ji Won A1 Jeong, Soi A1 Choi, Rino A1 Kwon, Daewoong PB Elsevier BV YR 2023 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 160 SP 107465 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2023.107465 DO https://doi.org/10.1016/j.mssp.2023.107465 SF ELIB - SuUB Bremen
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