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1 Ergebnisse
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Secondary defects of as-grown oxygen precipitates in nitrog..:
Tuo, Huan
;
Liu, Yun
;
Li, Minghao
...
Materials Science in Semiconductor Processing. 163 (2023) - p. 107583 , 2023
Link:
https://doi.org/10.1016/j.mssp.2023.107583
RT Journal T1 <Title>Secondary defects of as-grown oxygen precipitates in nitrogen doped Czochralski single crystal silicon</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2023.107583&Exemplar=1&LAN=DE A1 Tuo, Huan A1 Liu, Yun A1 Li, Minghao A1 Dai, Rongwang A1 Wang, Hao A1 Yu, Yuehui A1 Xue, Zhongying A1 Wei, Xing PB Elsevier BV YR 2023 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 163 SP 107583 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2023.107583 DO https://doi.org/10.1016/j.mssp.2023.107583 SF ELIB - SuUB Bremen
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