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Influence of Bi and N contents and dot radius on optoelectr..:
Jemmali, W.Q.
;
Habchi, M.M.
;
Rebey, A.
Materials Science in Semiconductor Processing. 169 (2024) - p. 107903 , 2024
Link:
https://doi.org/10.1016/j.mssp.2023.107903
RT Journal T1 <Title>Influence of Bi and N contents and dot radius on optoelectronic and diamagnetic properties of GaNAsBi strained quantum dot excitons</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2023.107903&Exemplar=1&LAN=DE A1 Jemmali, W.Q. A1 Habchi, M.M. A1 Rebey, A. PB Elsevier BV YR 2024 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 169 SP 107903 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2023.107903 DO https://doi.org/10.1016/j.mssp.2023.107903 SF ELIB - SuUB Bremen
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