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Enhanced dielectric properties induced by the rational desi..:
Feng, Mengna
;
Peng, Hongke
;
Huang, Yumin
.
Materials Science in Semiconductor Processing. 169 (2024) - p. 107944 , 2024
Link:
https://doi.org/10.1016/j.mssp.2023.107944
RT Journal T1 <Title>Enhanced dielectric properties induced by the rational design of interfacial buffer layer in MoS2/poly(arylene ether nitrile) composites</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2023.107944&Exemplar=1&LAN=DE A1 Feng, Mengna A1 Peng, Hongke A1 Huang, Yumin A1 Liu, Xiaobo PB Elsevier BV YR 2024 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 169 SP 107944 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2023.107944 DO https://doi.org/10.1016/j.mssp.2023.107944 SF ELIB - SuUB Bremen
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