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Study of hafnium defects in silicon dioxide using density f..:
Denice, Diana
;
Arya, A.
;
Kumar, Manoj
.
Materials Science in Semiconductor Processing. 174 (2024) - p. 108202 , 2024
Link:
https://doi.org/10.1016/j.mssp.2024.108202
RT Journal T1 <Title>Study of hafnium defects in silicon dioxide using density functional theory</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2024.108202&Exemplar=1&LAN=DE A1 Denice, Diana A1 Arya, A. A1 Kumar, Manoj A1 Vinod, Gopika PB Elsevier BV YR 2024 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 174 SP 108202 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2024.108202 DO https://doi.org/10.1016/j.mssp.2024.108202 SF ELIB - SuUB Bremen
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