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Improvement of warpage and leakage for 3D NAND flash memory:
Zhang, Kun
;
Zhou, Wenxi
;
Li, Tuo
...
Materials Science in Semiconductor Processing. 176 (2024) - p. 108294 , 2024
Link:
https://doi.org/10.1016/j.mssp.2024.108294
RT Journal T1 <Title>Improvement of warpage and leakage for 3D NAND flash memory</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2024.108294&Exemplar=1&LAN=DE A1 Zhang, Kun A1 Zhou, Wenxi A1 Li, Tuo A1 Wang, Sicong A1 Cheng, Xiaomin A1 Xia, Zhiliang A1 Miao, Xiangshui PB Elsevier BV YR 2024 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 176 SP 108294 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2024.108294 DO https://doi.org/10.1016/j.mssp.2024.108294 SF ELIB - SuUB Bremen
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