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Advances in fast 4H–SiC crystal growth and defect reduction..:
Tsuchida, Hidekazu
;
Kanda, Takahiro
Materials Science in Semiconductor Processing. 176 (2024) - p. 108315 , 2024
Link:
https://doi.org/10.1016/j.mssp.2024.108315
RT Journal T1 <Title>Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2024.108315&Exemplar=1&LAN=DE A1 Tsuchida, Hidekazu A1 Kanda, Takahiro PB Elsevier BV YR 2024 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 176 SP 108315 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2024.108315 DO https://doi.org/10.1016/j.mssp.2024.108315 SF ELIB - SuUB Bremen
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