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Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Cap..:
Marcuzzi, A.
;
Avramenko, M.
;
De Santi, C.
...
Materials Science in Semiconductor Processing. 177 (2024) - p. 108389 , 2024
Link:
https://doi.org/10.1016/j.mssp.2024.108389
RT Journal T1 <Title>Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2024.108389&Exemplar=1&LAN=DE A1 Marcuzzi, A. A1 Avramenko, M. A1 De Santi, C. A1 Geenen, F. A1 Moens, P. A1 Meneghesso, G. A1 Zanoni, E. A1 Meneghini, M. PB Elsevier BV YR 2024 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 177 SP 108389 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2024.108389 DO https://doi.org/10.1016/j.mssp.2024.108389 SF ELIB - SuUB Bremen
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