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1 Ergebnisse
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Improved resistive switching characteristics observed in am..:
Ahmad, Ibtisam
;
Lee, Doowon
;
Chae, Myoungsu
...
Materials Science in Semiconductor Processing. 184 (2024) - p. 108805 , 2024
Link:
https://doi.org/10.1016/j.mssp.2024.108805
RT Journal T1
Improved resistive switching characteristics observed in amorphous boron nitride-based RRAM device via oxygen doping: A study based on bulk and interface traps analysis
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mssp.2024.108805&Exemplar=1&LAN=DE A1 Ahmad, Ibtisam A1 Lee, Doowon A1 Chae, Myoungsu A1 Kim, Taegi A1 Ali, Mohsin A1 Kim, Hee-Dong PB Elsevier BV YR 2024 SN 1369-8001 JF Materials Science in Semiconductor Processing VO 184 SP 108805 LK http://dx.doi.org/https://doi.org/10.1016/j.mssp.2024.108805 DO https://doi.org/10.1016/j.mssp.2024.108805 SF ELIB - SuUB Bremen
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