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TCAD modeling of bulk radiation damage effects in silicon d..:
Asenov, Patrick
;
Arcidiacono, Roberta
;
Cartiglia, Nicolo
...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1040 (2022) - p. 167180 , 2022
Link:
https://doi.org/10.1016/j.nima.2022.167180
RT Journal T1 <Title>TCAD modeling of bulk radiation damage effects in silicon devices with the Perugia radiation damage model</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.nima.2022.167180&Exemplar=1&LAN=DE A1 Asenov, Patrick A1 Arcidiacono, Roberta A1 Cartiglia, Nicolo A1 Croci, Tommaso A1 Ferrero, Marco A1 Fondacci, Alessandro A1 Morozzi, Arianna A1 Moscatelli, Francesco A1 Passeri, Daniele A1 Sola, Valentina PB Elsevier BV YR 2022 SN 0168-9002 JF Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment VO 1040 SP 167180 LK http://dx.doi.org/https://doi.org/10.1016/j.nima.2022.167180 DO https://doi.org/10.1016/j.nima.2022.167180 SF ELIB - SuUB Bremen
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