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Mechanism of gate voltage spike under digital gate control ..:
Lou, Zaiqi
;
Mamee, Thatree
;
Hata, Katsuhiro
...
Power Electronic Devices and Components. 7 (2024) - p. 100054 , 2024
Link:
https://doi.org/10.1016/j.pedc.2023.100054
RT Journal T1
Mechanism of gate voltage spike under digital gate control at IGBT switching operations
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.pedc.2023.100054&Exemplar=1&LAN=DE A1 Lou, Zaiqi A1 Mamee, Thatree A1 Hata, Katsuhiro A1 Takamiya, Makoto A1 Nishizawa, Shin-ichi A1 Saito, Wataru PB Elsevier BV YR 2024 SN 2772-3704 JF Power Electronic Devices and Components VO 7 SP 100054 LK http://dx.doi.org/https://doi.org/10.1016/j.pedc.2023.100054 DO https://doi.org/10.1016/j.pedc.2023.100054 SF ELIB - SuUB Bremen
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