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Implantation-induced defects in silicon carbide:
Pensl, G
;
Frank, T
;
Krieger, M
...
Physica B: Condensed Matter. 340-342 (2003) - p. 121-127 , 2003
Link:
https://doi.org/10.1016/j.physb.2003.09.054
RT Journal T1 <Title>Implantation-induced defects in silicon carbide</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.physb.2003.09.054&Exemplar=1&LAN=DE A1 Pensl, G A1 Frank, T A1 Krieger, M A1 Laube, M A1 Reshanov, S A1 Schmid, F A1 Weidner, M PB Elsevier BV YR 2003 SN 0921-4526 JF Physica B: Condensed Matter VO 340-342 SP 121 OP 127 LK http://dx.doi.org/https://doi.org/10.1016/j.physb.2003.09.054 DO https://doi.org/10.1016/j.physb.2003.09.054 SF ELIB - SuUB Bremen
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