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Bandgap energy determination of InAsSb epilayers grown by m..:
Murawski, K.
;
Gomółka, E.
;
Kopytko, M.
...
Progress in Natural Science: Materials International. 29 (2019) 4 - p. 472-476 , 2019
Link:
https://doi.org/10.1016/j.pnsc.2019.08.005
RT Journal T1
Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.pnsc.2019.08.005&Exemplar=1&LAN=DE A1 Murawski, K. A1 Gomółka, E. A1 Kopytko, M. A1 Grodecki, K. A1 Michalczewski, K. A1 Kubiszyn, Ł. A1 Gawron, W. A1 Martyniuk, P. A1 Rogalski, A. A1 Piotrowski, J. PB Elsevier BV YR 2019 SN 1002-0071 JF Progress in Natural Science: Materials International VO 29 IS 4 SP 472 OP 476 LK http://dx.doi.org/https://doi.org/10.1016/j.pnsc.2019.08.005 DO https://doi.org/10.1016/j.pnsc.2019.08.005 SF ELIB - SuUB Bremen
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