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1 Ergebnisse
1
Channel width dependence of hot electron injection program/..:
Seo, Seung-Hwan
;
Kim, Se-Woon
;
Lee, Jang-Uk
...
Solid-State Electronics. 52 (2008) 6 - p. 844-848 , 2008
Link:
https://doi.org/10.1016/j.sse.2008.02.001
RT Journal T1
Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.sse.2008.02.001&Exemplar=1&LAN=DE A1 Seo, Seung-Hwan A1 Kim, Se-Woon A1 Lee, Jang-Uk A1 Kang, Gu-Cheol A1 Roh, Kang-Seob A1 Kim, Kwan-Young A1 Lee, Soon-Young A1 Choi, Chang-Min A1 Song, Kwan-Jae A1 Park, So-Ra A1 Park, Jun-Hyun A1 Jeon, Ki-Chan A1 Kim, Dong Myong A1 Kim, Dae Hwan A1 Shin, Hyungcheol A1 Lee, Jong Duk A1 Park, Byung-Gook PB Elsevier BV YR 2008 SN 0038-1101 JF Solid-State Electronics VO 52 IS 6 SP 844 OP 848 LK http://dx.doi.org/https://doi.org/10.1016/j.sse.2008.02.001 DO https://doi.org/10.1016/j.sse.2008.02.001 SF ELIB - SuUB Bremen
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