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1 Ergebnisse
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Reliability improvement in GaN HEMT power device using a fi..:
Wu, Wen-Hao
;
Lin, Yueh-Chin
;
Chin, Ping-Chieh
...
Solid-State Electronics. 133 (2017) - p. 64-69 , 2017
Link:
https://doi.org/10.1016/j.sse.2017.05.001
RT Journal T1
Reliability improvement in GaN HEMT power device using a field plate approach
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.sse.2017.05.001&Exemplar=1&LAN=DE A1 Wu, Wen-Hao A1 Lin, Yueh-Chin A1 Chin, Ping-Chieh A1 Hsu, Chia-Chieh A1 Lee, Jin-Hwa A1 Liu, Shih-Chien A1 Maa, Jer-shen A1 Iwai, Hiroshi A1 Chang, Edward Yi A1 Hsu, Heng-Tung PB Elsevier BV YR 2017 SN 0038-1101 JF Solid-State Electronics VO 133 SP 64 OP 69 LK http://dx.doi.org/https://doi.org/10.1016/j.sse.2017.05.001 DO https://doi.org/10.1016/j.sse.2017.05.001 SF ELIB - SuUB Bremen
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