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1 Ergebnisse
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Simulation of the effect of parasitic channel height on cha..:
Choi, Yunho
;
Lee, Kitae
;
Yeon Kim, Kyoung
...
Solid-State Electronics. 164 (2020) - p. 107686 , 2020
Link:
https://doi.org/10.1016/j.sse.2019.107686
RT Journal T1
Simulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FET
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.sse.2019.107686&Exemplar=1&LAN=DE A1 Choi, Yunho A1 Lee, Kitae A1 Yeon Kim, Kyoung A1 Kim, Sihyun A1 Lee, Junil A1 Lee, Ryoongbin A1 Kim, Hyun-Min A1 Suh Song, Young A1 Kim, Sangwan A1 Lee, Jong-Ho A1 Park, Byung-Gook PB Elsevier BV YR 2020 SN 0038-1101 JF Solid-State Electronics VO 164 SP 107686 LK http://dx.doi.org/https://doi.org/10.1016/j.sse.2019.107686 DO https://doi.org/10.1016/j.sse.2019.107686 SF ELIB - SuUB Bremen
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