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Physics-based compact model of transient leakage current ca..:
Yi, Boram
;
Park, Yeong-Hun
;
Yang, Ji-Woon
Solid-State Electronics. 164 (2020) - p. 107739 , 2020
Link:
https://doi.org/10.1016/j.sse.2019.107739
RT Journal T1
Physics-based compact model of transient leakage current caused by parasitic bipolar junction transistor in gate-all-around MOSFETs
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.sse.2019.107739&Exemplar=1&LAN=DE A1 Yi, Boram A1 Park, Yeong-Hun A1 Yang, Ji-Woon PB Elsevier BV YR 2020 SN 0038-1101 JF Solid-State Electronics VO 164 SP 107739 LK http://dx.doi.org/https://doi.org/10.1016/j.sse.2019.107739 DO https://doi.org/10.1016/j.sse.2019.107739 SF ELIB - SuUB Bremen
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